| 摘要 |
A thermally conductive silicone composition is provided, a cured material from which does not impose stress to IC packages, even left at a high temperature. The silicone composition has a viscosity at 25 degrees C of 10 to 1,000 Pa·s, and comprises
(A) 100 parts by mass of an organopolysiloxane having at least two alkenyl groups per molecule and a dynamic viscosity at 25 degrees C of 10 to 100,000 mm 2 /s,
(B) an organohydrogenpolysiloxane represented by the following formula (1) :
wherein n and m are positive integers which meet the equations: 10 ‰¦ n + m ‰¦ 100 and 0.01 ‰¦ n / m + n ‰¦ 0.3 ,
R 1 is, independently of each other, an alkyl group having 1 to 6 carbon atoms,
(C) an organohydrogenpolysiloxane represented by the following formula (2):
wherein p is a positive integer of from 5 to 1,000, and R 2 is, independently of each other, an alkyl group having 1 to 6 carbon atoms,
(D) an organohydrogenpolysiloxane represented by the following formula (3):
wherein k is a positive integer of from 2 to 10; R is, independently of each other, a hydrogen atom or R 4 , provided that two of R are a hydrogen atom, wherein R 4 is a group bonded to a silicon atom via a carbon atom or via a carbon atom and an oxygen atom and has a group selected from an epoxy group, an acryloyl group, a methacryloyl group, an ether group and a trialkoxysilyl group. R 3 is, independently of each other, an alkyl group having 1 to 6 carbon atoms,
(E) 400 to 3, 000 parts by mass of a thermally conductive filler,
(F) a catalytic amount of a platinum group metal catalyst, and
(G) 0.01 to 1 part by mass of a reaction retardant,
wherein amounts of components (B), (C) and (D) meet the following conditions:
a ratio, [the total number of Si-H groups in components (B), (C) and (D)]/[the number of alkenyl groups in component (A)], is in a range of 0.6 to 1.5;
a ratio, [the total number of Si-H groups in components (C) and (D)]/[the number of Si-H groups in component (B)], is in a range of 1 to 10; and
a ratio, [the number of Si-H groups in component (C)]/[the number of Si-H groups in component (D)], is in a range of 1 to 10.
The present invention also provides a semi-conductor device provided with a cured material obtained by curing the aforesaid composition. |
