| 摘要 |
A photodiode array for a computed tomography comprising a semiconductor substrate having a plurality of pn junction type photodiodes formed in an array on a light incidence side of the semiconductor substrate, a through-hole including a perpendicular hole portion formed almost perpendicular to the incidence surface on the incidence surface side, and a tapered hole portion formed on a surface opposite the incidence surface, wherein the tapered hole portion tapers inwards from the opposite surface towards the incidence surface and is connected to the perpendicular hole portion, a first conduction type high impurity concentration layer for surrounding the through-hole and a conductor layer formed in the through hole from the incidence surface to the opposite surface. |
