发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 Provided is a method for manufacturing a semiconductor device. The manufacturing method includes the following steps: forming a hard mask film including a lower portion on a lower structure and an upper portion on the lower portion, wherein the hard mask film is made of a photosensitive hard mask material; and performing an exposure and development process on the hard mask film and removing an upper portion of the hard mask film to form a hard mask structure having a flat upper surface. According to the manufacturing method, the hard mask film is flattened by using the exposure and development process, thereby simplifying a process and improving productivity.
申请公布号 KR20160029900(A) 申请公布日期 2016.03.16
申请号 KR20140118593 申请日期 2014.09.05
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, DO YOUNG;PARK, KYOUNG SIL
分类号 H01L21/027;G03F7/20 主分类号 H01L21/027
代理机构 代理人
主权项
地址