发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
Provided is a method for manufacturing a semiconductor device. The manufacturing method includes the following steps: forming a hard mask film including a lower portion on a lower structure and an upper portion on the lower portion, wherein the hard mask film is made of a photosensitive hard mask material; and performing an exposure and development process on the hard mask film and removing an upper portion of the hard mask film to form a hard mask structure having a flat upper surface. According to the manufacturing method, the hard mask film is flattened by using the exposure and development process, thereby simplifying a process and improving productivity. |
申请公布号 |
KR20160029900(A) |
申请公布日期 |
2016.03.16 |
申请号 |
KR20140118593 |
申请日期 |
2014.09.05 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, DO YOUNG;PARK, KYOUNG SIL |
分类号 |
H01L21/027;G03F7/20 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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