GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND PRODUCTION METHOD THEREFOR

摘要

The present invention provides a Group III nitride semiconductor light-emitting device in which the production method is simplified while migration of at least one of Ag atoms and Al atoms is suppressed, and a production method therefor. The production method comprises steps of forming a first electrode, forming a second electrode, and forming a second electrode side barrier metal layer on the second electrode. Moreover, the second electrode has an electrode layer containing at least one of Ag and Al. In forming the first electrode and the second electrode side barrier metal layer, the second electrode side barrier metal layer is formed on the second electrode while the first electrode to be electrically connected to the first semiconductor layer is formed. The first electrode and the second electrode side barrier metal layer are deposited are deposited in the same layered structure.

主权项

1. A method for producing a Group III nitride semiconductor light-emitting device comprising a first conduction type first semiconductor layer, a light-emitting layer, and a second conduction type second semiconductor layer, the method comprising:
forming a first electrode to be electrically connected to the first semiconductor layer; forming a second electrode to be electrically connected to the second semiconductor layer; and forming a second electrode side barrier metal layer on the second electrode; wherein the second electrode has an electrode layer containing at least one of Ag and Al; in the forming the first electrode and the forming the second electrode side barrier metal layer, the second electrode side barrier metal layer is formed on the second electrode while the first electrode to be electrically connected to the first semiconductor layer is formed; and the first electrode and the second electrode side barrier metal layer are deposited in the same layered structure.