Systems and Methods for Suppressing Parasitic Plasma and Reducing Within-Wafer Non-Uniformity

摘要

A substrate processing system for depositing film on a substrate includes a processing chamber defining a reaction volume. A showerhead includes a stem portion having one end connected adjacent to an upper surface of the processing chamber. A base portion is connected to an opposite end of the stem portion and extends radially outwardly from the stem portion. The showerhead is configured to introduce at least one of process gas and purge gas into the reaction volume. A plasma generator is configured to selectively generate RF plasma in the reaction volume. An edge tuning system includes a collar and a parasitic plasma reducing element that is located around the stem portion between the collar and an upper surface of the showerhead. The parasitic plasma reducing element is configured to reduce parasitic plasma between the showerhead and the upper surface of the processing chamber.

主权项

1. A substrate processing system for depositing film on a substrate, comprising:
a processing chamber defining a reaction volume; a showerhead including:
a stem portion having one end connected adjacent to an upper surface of the processing chamber; anda base portion connected to an opposite end of the stem portion and extending radially outwardly from the stem portion,wherein the showerhead is configured to introduce at least one of process gas and purge gas into the reaction volume; a plasma generator configured to selectively generate RF plasma in the reaction volume; and an edge tuning system including:
a collar arranged around the stem portion of the showerhead between the base portion of the showerhead and the upper surface of the processing chamber,wherein the collar includes one or more holes for supplying purge gas from an inner cavity of the collar to an area between the base portion of the showerhead and the upper surface of the processing chamber, wherein the purge gas is a reactant gas; anda parasitic plasma reducing element located around the stem portion between the collar and an upper surface of the showerhead and configured to reduce parasitic plasma between the showerhead and the upper surface of the processing chamber.