| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of producing a semiconductor single crystal stably by the FZ method by improving unevenness of the growth of a semiconductor single crystal due to effects of asymmetric heating of an induction heating coil on inversion during growth of a cone part, in alternate rotation on the side of the single crystal to obtain a stable in-plane resistivity distribution from the starting position of the straight cylindrical part.SOLUTION: In a method of producing a semiconductor single crystal by the FZ method that is based on changing the rotation direction of a growing semiconductor single crystal alternately in growing a semiconductor single crystal by melting a raw material crystal partially, through heating with an induction heating coil, while rotating the raw material crystal, so as to form a molten zone and moving the molten zone from one end to the other end of the raw material crystal, the semiconductor single crystal is grown by increasing the numbers of normal rotations and reverse rotations in the alternate rotation condition during growth of the cone part of the semiconductor single crystal more than the numbers of normal rotations and reverse rotations in the alternate rotation condition during growth of the straight cylindrical part of the semiconductor single crystal. |
