发明名称 |
High frequency power diode and method for manufacturing the same |
摘要 |
A high frequency power diode is provided comprising a semiconductor wafer having a first main side (101) and a second main side (102), a first layer (103) of a first conductivity type formed on the first main side (101), a second layer (105) of a second conductivity type formed on the second main side (102) and a third layer (104) of the second conductivity type formed between the first layer (103) and the second layer (105). The first layer (103) has a dopant concentration decreasing from 10 19 cm -3 or more adjacent to the first main side (101) of the wafer to 1.5-10 15 cm -3 or less at an interface of the first layer (103) with the third layer (104). The second layer (105) has a dopant concentration decreasing from 10 19 cm -3 or more adjacent to the second main side (102) of the wafer to 1.5,10 15 cm -3 at an interface of the second layer (105) with the third layer (104) and the third layer (104) has a dopant concentration of 1.5·10 15 cm -3 or less. The dopant concentration in the first layer (103) at a distance of 50 µm from the first main side (101) and the dopant concentration in the second layer (105) at a distance of 50 µm from the second main side (102) is 10 17 cm -3 or more, respectively, and the thickness of the third layer (104) is less than 60 µm. |
申请公布号 |
EP2996152(A1) |
申请公布日期 |
2016.03.16 |
申请号 |
EP20140184784 |
申请日期 |
2014.09.15 |
申请人 |
ABB TECHNOLOGY AG |
发明人 |
HOMOLA, JAROSLAV;PODZEMSKY, JIRI;RADVAN, LADISLAV;MULLER, ILJA |
分类号 |
H01L29/32;H01L29/66;H01L29/868 |
主分类号 |
H01L29/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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