发明名称 |
THERMOELECTRIC MATERIAL, METHOD FOR PRODUCING SAME, AND THERMOELECTRIC CONVERSION MODULE USING SAME |
摘要 |
A thermoelectric material includes a semiconductor substrate, a semiconductor oxide film formed on the substrate, and a thermoelectric layer provided on the oxide film. The semiconductor oxide film has a first nano-opening formed therein. The thermoelectric layer has such a configuration that semiconductor nanodots are piled up on or above the first nano-opening so as to form a particle packed structure. At least some of the nanodots each have a second nano-opening formed in its surface, and are connected to each other through the second nano-opening with their crystal orientation aligned. The thermoelectric material is produced through steps of oxidizing the substrate to form the semiconductor oxide film thereon, forming the first nano-opening in the oxide film, and epitaxially growing to pile up the plurality of nanodots on the first nano-opening. As a result, it is possible to provide the thermoelectric material superior in thermoelectric conversion performance. |
申请公布号 |
EP2784835(B1) |
申请公布日期 |
2016.03.16 |
申请号 |
EP20130796323 |
申请日期 |
2013.05.15 |
申请人 |
JAPAN SCIENCE AND TECHNOLOGY AGENCY |
发明人 |
NAKAMURA, YOSHIAKI;ISOGAWA, MASAYUKI;UEDA, TOMOHIRO;KIKKAWA, JUN;SAKAI, AKIRA;HOSONO, HIDEO |
分类号 |
H01L35/32;H01L35/14;H01L35/34 |
主分类号 |
H01L35/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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