| 摘要 |
An electrical contact comprising a metal and a group IV semiconductor separated by a monolayer of group V atoms at an interface between the metal and the group IV semiconductor, the atoms of the monolayer being epitaxially aligned with a lattice structure of the group IV semiconductor. This results in the specific contact resistance of the metal being reduced. In one embodiment the metal may be a ferromagnetic metal. The application further discloses the use of III-V bi layers as well as group III monolayers. |
