| 摘要 |
Provided is a substrate processing method capable of shortening time of continuously processing a substrate with a plurality of processing gases. A substrate processing apparatus (10) includes a chamber (11) and an input pipe (19) of a processing gas input line (12) which receives the processing gas. When an etching process is continuously on a substrate S on which a first layer, a second layer, and a third layer are successively laminated, a first etching gas is compressed and discharged from the input pipe (19) or the chamber (11) by inputting a substitution gas to the input pipe (19) after the first layer is etched. After the second layer is etched, a second etching gas is compressed and discharged from the input pipe (19) or the chamber (11) by inputting the substitution gas to the input pipe (19). After the third layer is etched, a third etching gas is compressed and discharged from the input pipe (19) or the chamber (11) by inputting the substitution gas to the input pipe (19). [Reference numerals] (AA) Exchanging gas;(BB) First etchant;(CC) Second etchant;(DD) Third etchant;(EE) Postprocessing gas;(FF) RF power;(GG,PP) Vacuum suction;(HH) Pressure adjustment;(II) First etching;(JJ,LL,NN) Exchanging;(KK) Second etching;(MM) Third etching;(OO) Postprocessing |
