发明名称 |
STORING MEMORY WITH NEGATIVE DIFFERENTIAL RESISTANCE MATERIAL |
摘要 |
A memory cell includes a transistor with a first source/drain terminal spaced apart from a second source/drain terminal with a semiconductor material; a gate terminal located proximate the semiconductor material such that an increase in a gate terminal voltage increases a conductivity of the semiconductor material; and the first source/drain terminal being connected in series to a negative differential resistance material. |
申请公布号 |
EP2878012(A4) |
申请公布日期 |
2016.03.16 |
申请号 |
EP20120881726 |
申请日期 |
2012.07.27 |
申请人 |
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. |
发明人 |
PICKETT, MATTHEW D. |
分类号 |
G11C13/00;G11C11/39;G11C11/40;H01L21/8242;H01L21/8246;H01L27/10;H01L27/105;H01L27/108;H01L27/11;H01L27/26;H01L47/00 |
主分类号 |
G11C13/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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