发明名称 OPTIMIZING fuseROM USAGE FOR MEMORY REPAIR
摘要 A memory repair system in an integrated circuit (IC) that optimizes the fuseROM used for memory repair. The IC includes a plurality of memory wrappers. Each memory wrapper includes a memory block with a fuse register and a bypass register. The bypass register has a bypass data that indicates a defective memory wrapper of the plurality of memory wrappers. A fuseROM controller is coupled to the plurality of memory wrappers. A memory bypass chain links the bypass registers in the plurality of memory wrappers with the fuseROM controller. The fuseROM controller loads the bypass data in the memory bypass chain. A memory data chain links the fuse registers in the plurality of memory wrappers with the fuseROM controller. The memory data chain is re-configured to link the fuse registers in a set of defective memory wrappers of the plurality of memory wrappers responsive to the bypass data loaded in the memory bypass chain.
申请公布号 EP2994915(A1) 申请公布日期 2016.03.16
申请号 EP20140749339 申请日期 2014.02.07
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 VARADARAJAN, DEVANATHAN;ELLUR, HARSHARAJ
分类号 G11C29/12;G01R31/3187;G06F11/27;G11C17/16 主分类号 G11C29/12
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