| 发明名称 | Composite substrate and method for manufacturing same | ||
| 摘要 | [Problem] To provide a composite substrate which includes a silicon substrate having few lattice defects. [Solution] A composite substrate (50) that comprises a first substrate (10), which is constituted of a semiconductor material, a second substrate (40), which is constituted of an insulating material, and an oxide layer (30) and a semiconducting epitaxial layer (20) which have been disposed between the substrates (10) and (40) in this order from the second substrate (40) side, the oxide layer (30) having oxygen atoms arranged on the side thereof which faces the epitaxial layer (20). | ||
| 申请公布号 | US9287351(B2) | 申请公布日期 | 2016.03.15 |
| 申请号 | US201214130217 | 申请日期 | 2012.06.26 |
| 申请人 | Kyocera Corporation | 发明人 | Kitada Masanobu;Honjo Tomofumi |
| 分类号 | H01L21/58;H01L29/02;H01L21/762;H01L21/86;H01L21/02;H01L21/20 | 主分类号 | H01L21/58 |
| 代理机构 | Duane Morris LLP | 代理人 | Duane Morris LLP |
| 主权项 | 1. A method for manufacturing a composite substrate, the method comprising: preparing a first substrate comprising a semiconductor material and a second substrate comprising an insulating material; forming an epitaxial layer having semiconductor characteristics on the first substrate; forming an oxide layer on the epitaxial layer by an Atomic Layer Deposition method; and bonding the second substrate to the oxide layer to obtain a composite substrate. | ||
| 地址 | Kyoto JP | ||