Metal finger capacitor for high-K metal gate processes

摘要

Embodiments described herein provide a structure for finger capacitors, and more specifically metal-oxide-metal (“MOM”) finger capacitors and arrays of finger capacitors. A plurality of Shallow Trench Isolation (STI) formations is associated with every other column of capacitor fingers, with poly fill formations covering the STI formations to provide a more robust and efficient structure.

主权项

1. A finger capacitor, comprising:
a substrate; a plurality of shallow trench isolation (STI) formations formed in the substrate; a plurality of poly fill formations, each poly fill formation covering a respective STI formation; a plurality of columns including a first set of metal fingers intertwined with a second set of metal fingers; a cathode block connected to the first set of metal fingers; and an anode block connected to the second set of metal fingers, wherein the plurality of STI formations are aligned at a substantially constant pitch such that consecutive ones of the plurality of STI formations overlap with every other column from among the plurality of columns, the overlap being in a direction perpendicular to a top surface of the substrate, and wherein remaining columns from among the plurality of columns do not overlap with the plurality of STI formations in the direction perpendicular to the top surface of the substrate, and a first metal finger of the first set of metal fingers and a first metal finger of the second set of metal fingers of the every other column from among the plurality of columns are directly aligned with a poly fill formation of the plurality of poly fill formations in the direction perpendicular to the top surface of the substrate.