Package-on-package structure and method of forming same

摘要

A device comprises a bottom package comprising interconnect structures, first bumps on a first side and metal bumps on a second side, a semiconductor die bonded on the bottom package, wherein the semiconductor die is electrically coupled to the first bumps through the interconnect structures. The device further comprises a top package bonded on the second side of the bottom package, wherein the top package comprises second bumps, and wherein each second bump and a corresponding metal bump form a joint structure between the top package and the bottom package and an underfill layer formed between the top package and the bottom package, wherein the metal bumps are embedded in the underfill layer.

主权项

1. A device comprising:
a bottom package comprising:
a plurality of interconnect structures;a plurality of first bumps formed on a first side of the bottom package; anda plurality of metal bumps formed on a second side of the bottom package, wherein the metal bump is of a width D1 and a height H1, and wherein D1 is greater than H1, and wherein each metal bump has a planar top surface and a planar bottom surface; a semiconductor die bonded on the second side of the bottom package, wherein the semiconductor die is electrically coupled to the first bumps through the interconnect structures and a redistribution layer of the semiconductor die is in direct contact with the interconnect structures; a top package bonded on the second side of the bottom package, wherein:
the top package comprises a plurality of second bumps, and wherein each second bump and a corresponding metal bump form a joint structure between the top package and the bottom package; and an underfill layer formed between the top package and the bottom package, wherein the metal bumps are embedded in the underfill layer and a bottom surface of the underfill layer is level with the planar bottom surface.