| 发明名称 | Re-crystallization for boosting stress in MOS device | ||
| 摘要 | A method includes forming a dummy gate stack over a semiconductor substrate, removing the dummy gate stack to form a recess, and implanting a portion of the semiconductor substrate through the recess. During the implantation, an amorphous region is formed from the portion of the semiconductor substrate. The method further includes forming a strained capping layer, wherein the strained capping layer extends into the recess. An annealing is performed on the amorphous region to re-crystallize the amorphous region. The strained capping layer is then removed. | ||
| 申请公布号 | US9287139(B2) | 申请公布日期 | 2016.03.15 |
| 申请号 | US201414186384 | 申请日期 | 2014.02.21 |
| 申请人 | Taiwan Semiconductor Manufacturing Company, Ltd. | 发明人 | Hsiao Ru-Shang;Chan Cing-Yao;Wang Chun-Ying;Wang Jen-Pan |
| 分类号 | H01L21/324;H01L29/66;H01L21/265;H01L29/78 | 主分类号 | H01L21/324 |
| 代理机构 | Slater & Matsil, L.L.P. | 代理人 | Slater & Matsil, L.L.P. |
| 主权项 | 1. A method comprising: forming a dummy gate stack over a semiconductor substrate; removing the dummy gate stack thereby forming a recess; implanting a portion of the semiconductor substrate through the recess, wherein an amorphous region is formed from the portion of the semiconductor substrate; forming a strained capping layer, wherein the strained capping layer extends into the recess; performing an annealing on the amorphous region to re-crystallize the amorphous region; and then removing the strained capping layer. | ||
| 地址 | Hsin-Chu TW | ||