发明名称 |
Light-emitting diode and method for manufacturing the same |
摘要 |
The disclosure provides a light-emitting diode and a method for manufacturing the same. The light-emitting diode comprises a N-type metal electrode, a N-type semiconductor layer contacted with the N-type metal electrode, a P-type semiconductor layer, a light-emitting layer interposed between the N-type semiconductor layer and the P-type semiconductor layer, a low-contact-resistance material layer positioned on the P-type semiconductor layer, a transparent conductive layer covered the low-contact-resistance material layer and the P-type semiconductor layer, and a P-type metal electrode positioned on the transparent conductive layer. |
申请公布号 |
US9287461(B2) |
申请公布日期 |
2016.03.15 |
申请号 |
US201314054303 |
申请日期 |
2013.10.15 |
申请人 |
LEXTAR ELECTRONICS CORPORATION |
发明人 |
Hsiao Chia-Lin;Hsu Nai-Wei;Wang Te-Chung;Yang Tsung-Yu |
分类号 |
H01L33/38;H01L33/42;H01L33/14 |
主分类号 |
H01L33/38 |
代理机构 |
Moser Taboada |
代理人 |
Moser Taboada |
主权项 |
1. A light-emitting diode comprising:
an N-type metal electrode; an N-type semiconductor layer contacting the N-type metal electrode; a P-type semiconductor layer; a light-emitting layer sandwiched between the N-type semiconductor layer and the P-type semiconductor layer; a low-contact-resistance material layer positioned on a part of the P-type semiconductor layer; a transparent conductive layer covering the low-contact-resistance material layer and the P-type semiconductor layer; a P-type metal electrode positioned on the transparent conductive layer; and a metal-indium contact layer positioned between the P-type semiconductor layer and the transparent conductive layer, wherein the low-contact-resistance material layer is embedded in the metal-indium contact layer and protrudes above a surface of the metal-indium contact layer into the transparent conductive layer. |
地址 |
Hsinchu TW |