| 发明名称 | III nitride semiconductor device and method of producing the same | ||
| 摘要 | Provided are a III nitride semiconductor device which can be operated at a lower voltage can be provided, in which device a good ohmic contact is achieved between the (000-1) plane side of the III nitride semiconductor layer and the electrode and a method of producing the III nitride semiconductor device. A III nitride semiconductor device of the present invention includes a plurality of protrusions rounded like domes in a predetermined region on the (000-1) plane side of the III nitride semiconductor layer; and an electrode on the upper surface of the predetermined region. | ||
| 申请公布号 | US9287366(B2) | 申请公布日期 | 2016.03.15 |
| 申请号 | US201214369584 | 申请日期 | 2012.12.12 |
| 申请人 | DOWA ELECTRONICS MATERIALS CO., LTD. | 发明人 | Kadowaki Yoshitaka;Toyota Tatsunori |
| 分类号 | H01L29/20;H01L33/20;H01L21/02;H01L21/28;H01L21/306;H01L29/04;H01L29/06;H01L29/45;H01L33/32;H01L33/40 | 主分类号 | H01L29/20 |
| 代理机构 | Oliff PLC | 代理人 | Oliff PLC |
| 主权项 | 1. A III nitride semiconductor device having a III nitride semiconductor layer, comprising: a plurality of protrusions rounded like domes in a predetermined region on the (000-1) side of the III nitride semiconductor layer, a surface of the plurality of protrusions comprising planes except for the (000-1) plane, and a height of the protrusions being 0.1 μm to 3 μm; and an electrode on the upper surface of the predetermined region. | ||
| 地址 | Tokyo JP | ||