Method of etching a boron doped carbon hardmask

摘要

In one embodiment, a method is proposed for etching a boron dope hardmask layer. The method includes flowing a process gas comprising at least CH4 into a processing chamber. Forming a plasma in the process chamber from the process gas and etching the boron doped hardmask layer in the presence of the plasma. In other embodiments, the process gas utilized to etch the boron doped hardmask layer includes CH4, Cl2, SF6 and O2.

主权项

1. A method for etching a boron doped amorphous carbon hardmask layer, comprising:
flowing a process gas comprising Cl2, CH4, SF6, and O2 into a processing chamber; forming a plasma in the processing chamber from the process gas; etching the boron doped amorphous carbon hardmask layer in the presence of the plasma; and forming a polymer coating on sidewalls of a feature etched into the boron doped amorphous carbon hardmask layer with the process gas.