| 发明名称 | Semiconductor circuit | ||
| 摘要 | An inspection device includes first and second electro-optical systems, a first detector, and a shape calculation unit. The first electro-optical system irradiates an object to be inspected with a first electron beam to cause an irradiation mark to be placed on the object to be inspected. The second electro-optical system irradiates the object to be inspected with a second electron beam. The first detector detects a secondary electron generated from the object to be inspected in response to the irradiation by the second electron beam, and outputs a first signal based on the irradiation mark. The shape calculation unit calculates a three-dimensional shape of the object to be inspected based on the first signal, an irradiation direction of the first electron beam, and an irradiation direction of the second electron beam. | ||
| 申请公布号 | US9287088(B2) | 申请公布日期 | 2016.03.15 |
| 申请号 | US201414174718 | 申请日期 | 2014.02.06 |
| 申请人 | Kabushiki Kaisha Toshiba | 发明人 | Ikeda Takahiro |
| 分类号 | H01J37/00;H01J37/28 | 主分类号 | H01J37/00 |
| 代理机构 | Patterson & Sheridan, LLP | 代理人 | Patterson & Sheridan, LLP |
| 主权项 | 1. An inspection device comprising: a first electro-optical system configured to irradiate an object to be inspected with a first electron beam to cause an irradiation mark to be placed on the object to be inspected; a second electro-optical system configured to irradiate the object to be inspected with a second electron beam; a first detector configured to detect a secondary electron generated from the object to be inspected in response to the irradiation by the second electron beam, and output a first signal based on the irradiation mark; and a shape calculation unit configured to calculate a three-dimensional shape of the object to be inspected based on the first signal, an irradiation direction of the first electron beam, and an irradiation direction of the second electron beam. | ||
| 地址 | Tokyo JP | ||