Circuit arrangement for creating microwave oscillations

摘要

An electronic oscillator of a circuit arrangement for creating microwave oscillations with two transistors as amplifier elements and with a resonator (4), wherein the resonator has two emitter impedance networks, the base impedance network and/or an emitter impedance network or both emitter impedance networks can be put out of tune and the transistors each have a parasitic base collector capacitance. The repercussion of the load on the electronic oscillator (“load-pulling”) is greatly reduced so as to be eliminated as much as possible, in that a compensation capacitance is switched between the collector of the first transistor and the base of the second transistor as well as between the collector of the second transistor and the base of the first transistor, and the compensation capacitances are implemented by reverse-biased pn-junctions.

主权项

1. A circuit arrangement for creating microwave oscillations, comprising: an electronic oscillator with a first transistor, a second transistor and a resonator,
wherein the first transistor and the second transistor each comprise a base, an emitter, a collector and a base collector junction that establishes a parasitic base collector capacitance, wherein a first compensation capacitance is connected between the collector of the first transistor and the base of the second transistor and a second compensation capacitance is connected between the collector of the second transistor and the base of the first transistor, wherein each of the first compensation capacitance and the second compensation capacitance is preset to a capacitance value that is less than a capacitance value of the parasitic base collector capacitance of each of the first transistor and the second transistor, and wherein the capacitance value of each of the first compensation capacitance and the second compensation capacitance has been set to produce an effective capacitance value due to parasitic series inductances that is essentially as large as the capacitance value of the parasitic base collector capacitance of each of the first transistor and the second transistor.