| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light-emitting device capable of improving external quantum efficiency while excellently forming an n-type nitride semiconductor layer which covers a protrusion pattern, and a light-emitting element unit including the same. <P>SOLUTION: A protrusion pattern 20 is composed of an aggregate of a plurality of protrusions 19 discretely arranged at mutual intervals of a first pitch p<SB POS="POST">1</SB>on a surface 3 of a substrate 2. The protrusion 19 comprises: a fine protrusion pattern 36 composed of an aggregate of a plurality of fine protrusions 35 discretely formed on an apex of the protrusion 19 at intervals of a second pitch p<SB POS="POST">2</SB>which is smaller than the first pitch p<SB POS="POST">1</SB>; and a base part 37 which supports the fine protrusion pattern 36. <P>COPYRIGHT: (C)2013,JPO&INPIT |
