薄膜トランジスタおよびその製造方法、ならびに電子機器

摘要

A thin film transistor includes: an organic semiconductor layer which is formed from a metal-containing material containing at least one of a metallic element and a semi-metallic element capable of reacting with an etching gas; a source electrode and a drain electrode spaced apart from each other; and an organic conductive layer which is inserted between the organic semiconductor layer and the source and drain electrodes in the regions where the organic semiconductor layer overlaps with the source and drain electrodes and which is formed from a non-metal-containing material not containing at least one of a metallic element and a semi-metallic element capable of reacting with the etching gas.