发明名称 |
Devices having nitride quantum dot and methods of manufacturing the same |
摘要 |
Devices having nitride quantum dots and methods of manufacturing the same are provided. The device includes a nitride group material substrate, a plurality of nanorods that are formed on the nitride group material layer and are separated from each other, and a nitride quantum dot on each of the nanorods. A pyramid-shaped layer may be further formed between each of the nanorods and the nitride quantum dot. The nanorods and the nitride quantum dot are covered by an upper contact layer. A plurality of nitride quantum dots may be formed on each of the nanorods and the respective nitride quantum dots may have different sizes. |
申请公布号 |
US9287444(B2) |
申请公布日期 |
2016.03.15 |
申请号 |
US201414492594 |
申请日期 |
2014.09.22 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD.;KOREA PHOTONICS TECHNOLOGY INSTITUTE |
发明人 |
Lee Jae-soong;Song Young-ho;Jeon Seong-ran;Kim Seung-hwan |
分类号 |
H01L33/32;H01L33/06;H01L33/24;H01L33/00;H01L33/50 |
主分类号 |
H01L33/32 |
代理机构 |
Sughrue Mion, PLLC |
代理人 |
Sughrue Mion, PLLC |
主权项 |
1. A device comprising:
a nitride group material substrate; a plurality of nanorods that are disposed on the nitride group material substrate and are separated from each other; and a plurality of nitride quantum dots which are disposed on and in direct contact with the nanorods. |
地址 |
Suwon-si KR |