Oxide semiconductor film and formation method thereof

摘要

To provide a crystalline oxide semiconductor film, an ion is made to collide with a target including a crystalline In—Ga—Zn oxide, thereby separating a flat-plate-like In—Ga—Zn oxide in which a first layer including a gallium atom, a zinc atom, and an oxygen atom, a second layer including an indium atom and an oxygen atom, and a third layer including a gallium atom, a zinc atom, and an oxygen atom are stacked in this order; and the flat-plate-like In—Ga—Zn oxide is irregularly deposited over a substrate while the crystallinity is maintained.

主权项

1. An oxide semiconductor film comprising:
a plurality of plate particles each including indium, gallium, zinc, and oxygen, wherein the plurality of plate particles are arranged irregularly, and wherein the plurality of plate particles each have regularity in atomic arrangement.