A bipolar transistor includes a collector including a laterally extending drift region. The bipolar transistor also includes a base located above the collector. The bipolar transistor further includes an emitter located above the base. The bipolar transistor also includes a doped region having a conductivity type that is different to that of the collector. The doped region extends laterally beneath the collector to form a junction at a region of contact between the doped region and the collector. The doped region has a non-uniform lateral doping profile. A doping level of the doped region is highest in a part of the doped region closest to a collector-base junction of the bipolar transistor.
申请公布号
EP2996153(A1)
申请公布日期
2016.03.16
申请号
EP20140184549
申请日期
2014.09.12
申请人
NXP B.V.
发明人
VANHOUCKE, TONY;DINH, VIET THANH;MAGNEE, PETRUS HUBERTUS CORNELIS;PONKY, IVO;KLAASSEN, DIRK;AL-SA'DI, MAHMOUD SHEHAB MOHAMMAD