METAL GATE STRUCTURE WITH DEVICE GAIN AND YIELD IMPROVEMENT

摘要

The present disclosure provides a semiconductor structure. The semiconductor structure comprises: a semiconductor substrate; and a gate stack disposed on the semiconductor substrate. The gate stack includes: a high-k dielectric material layer; a titanium-rich TiN layer over the high-k dielectric layer; and a metal layer disposed over the titanium-rich TiN layer. The metal layer includes aluminum.