发明名称 |
炭化珪素半導体素子および炭化珪素半導体素子の製造方法 |
摘要 |
An infrared ray absorbing film (8) is selectively formed on a surface of an n - -type silicon carbide substrate (1). A p-type contact pattern (9) including aluminum and a Ni pattern (10) including nickel are selectively formed in this order on the n - -type silicon carbide substrate (1), in an area excluding an area in which the infrared ray absorbing film (8) is formed. The n - -type silicon carbide substrate (1) is thereafter heated using a rapid annealing process to form an ohmic electrode that includes the p-type contact pattern (9) and the Ni pattern (10) converted into silicide. |
申请公布号 |
JP5885284(B2) |
申请公布日期 |
2016.03.15 |
申请号 |
JP20150525333 |
申请日期 |
2014.08.08 |
申请人 |
富士電機株式会社;国立研究開発法人産業技術総合研究所 |
发明人 |
内海 誠;酒井 善行;福田 憲司;原田 信介;岡本 光央 |
分类号 |
H01L21/28;H01L21/265;H01L21/336;H01L29/06;H01L29/12;H01L29/78 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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