Processing device for producing semiconductor layers and coated substrates treated with elemental selenium and/or sulphur

摘要

A processing device for producing semiconductor layers and coated substrates treated with elemental selenium and/or sulphur includes an evacuable processing chamber for receiving a substrate to be processed. The substrate has a metal layer and/or a layer containing metal. A heating device provides convective heating of the substrate to a predetermined temperature. A first source of elementary selenium and/or sulphur vapor is located outside the processing chamber and connected to the processing chamber via a first feed line and/or a second source of elementary selenium and/or sulphur vapor is located inside the processing chamber. The elementary selenium and/or sulphur vapor is guided past the metal layer and/or layer containing metal, chemically reacting said layer with selenium or sulphur in a targeted manner. The substrate is heated and the elementary selenium and/or sulphur vapor is mixed and guided past the substrate by forced convection of a gas conveying device.

主权项

1. A processing device for producing semiconductor layers and coated substrates treated with elemental selenium and/or sulphur, comprising:
an evacuable processing chamber for receiving at least one substrate to be processed, wherein the substrate to be processed has at least one metal layer and/or at least one layer containing metal; a heating device for convective heating of the substrate to be processed to a predetermined substrate temperature; a first source of elementary selenium and/or sulphur vapor located outside the processing chamber and connected to the processing chamber via a first feed line and/or a second source of elementary selenium and/or sulphur vapor located inside the processing chamber, wherein the elementary selenium and/or sulphur vapor is guided past the metal layer and/or layer containing metal, under rough vacuum conditions or ambient pressure conditions or overpressure conditions, in order to chemically react said layer with selenium or sulphur in a controlled manner; and a gas conveying device for generating a gas flow circuit by way of forced convection in the processing chamber, wherein the substrate is heated by way of the forced convection, and wherein the elementary selenium and/or sulphur vapor is mixed and guided past the substrate by way of the forced convection; wherein the heating device is arranged in the gas flow circuit generated by the gas conveying device in order to heat the elementary selenium and/or sulphur vapor in the processing chamber.