Resistance variable memory cell structures and methods

摘要

Resistance variable memory cell structures and methods are described herein. One or more resistance variable memory cell structures include a first electrode common to a first and a second resistance variable memory cell, a first vertically oriented resistance variable material having an arcuate top surface in contact with a second electrode and a non-arcuate bottom surface in contact with the first electrode; and a second vertically oriented resistance variable material having an arcuate top surface in contact with a third electrode and a non-arcuate bottom surface in contact with the first electrode.

主权项

1. A method of forming a memory cell, comprising:
forming a memory cell material on a first electrode, wherein the memory cell material is formed on a wall of a via and on the first electrode; forming a first dielectric material on the memory cell material; removing a portion of the first dielectric material such that a portion of the memory cell material is exposed; forming a second electrode on a first exposed portion of the memory cell material and a third electrode on a second exposed portion of the memory cell material; and forming a spacer material on at least a portion of the second electrode and on at least a portion of the first dielectric material; and forming a first and a second memory cell structure by:
removing at least a portion of the spacer material between the second and the third electrodes;removing at least a portion of the first dielectric material within the via; andremoving at least a portion of the memory cell material formed on the first electrode.