发明名称 |
Deep ultraviolet light emitting diode |
摘要 |
A carbon doped short period superlattice is provided. A heterostructure includes a short period superlattice comprising a plurality of quantum wells alternating with a plurality of barriers. One or more of the quantum wells and/or the barriers includes a carbon doped layer (e.g., a non-percolated or percolated carbon atomic plane). |
申请公布号 |
US9287455(B2) |
申请公布日期 |
2016.03.15 |
申请号 |
US201414184741 |
申请日期 |
2014.02.20 |
申请人 |
Sensor Electronic Technology, Inc. |
发明人 |
Shur Michael;Gaska Remigijus;Yang Jinwei |
分类号 |
H01L33/04;H01L33/32;H01L33/06;H01L33/02;H01L33/14;H01L33/10 |
主分类号 |
H01L33/04 |
代理机构 |
LaBatt, LLC |
代理人 |
LaBatt, LLC |
主权项 |
1. A group III nitride semiconductor heterostructure comprising:
a short period superlattice comprising a plurality of quantum wells alternating with a plurality of barriers, wherein the plurality quantum wells comprise a semiconductor material having a first band gap and the plurality of barriers comprise a semiconductor material having a second band gap wider than the first band gap, and wherein at least one of: the plurality of quantum wells or the plurality of barriers includes a carbon doped layer including a plurality of openings. |
地址 |
Columbia SC US |