Image sensor having metal contact coupled through a contact etch stop layer with an isolation region

摘要

An image sensor pixel includes one or more photodiodes disposed in a semiconductor layer. Pixel circuitry is disposed in the semiconductor layer coupled to the one or more photodiodes. A passivation layer is disposed proximate to the semiconductor layer over the pixel circuitry and the one or more photodiodes. A contact etch stop layer is disposed over the passivation layer. One or more metal contacts are coupled to the pixel circuitry through the contact etch stop layer. One or more isolation regions are defined in the contact etch stop layer that isolate contact etch stop layer material through which the one or more metal contacts are coupled are coupled to the pixel circuitry from the one or more photodiodes.

主权项

1. An image sensor pixel, comprising:
one or more photodiodes disposed in a semiconductor layer; pixel circuitry disposed in the semiconductor layer coupled to the one or more photodiodes; a passivation layer disposed proximate to the semiconductor layer over the pixel circuitry and the one or more photodiodes; a single contact etch stop layer disposed over the passivation layer, wherein the single contact etch stop layer defines one or more isolation regions, wherein there is an absence of material of the single contact etch stop layer in the one or more isolation regions defined in the single contact etch stop layer; one or more metal contacts coupled to the pixel circuitry through a first portion of the single contact etch stop layer, wherein a second portion of the single contact etch stop layer is disposed in a photodiode region of the one or more photodiodes, wherein the one or more isolation regions defined in the single contact etch stop layer isolate the first portion of the single contact etch stop layer from the second portion of the single contact etch stop layer.