Semiconductor device including multi-layer structure

摘要

Present example embodiments relate generally to methods of fabricating a semiconductor device, and semiconductor devices thereof, comprising providing a substrate, forming an insulating base layer on the substrate, and disposing a conductive layer on the insulating base layer at an initial temperature. The methods further comprise increasing the initial temperature at a first increase rate to a first increased temperature and performing an in-situ annealing process to the conductive layer at the first increased temperature. The methods further comprise increasing the first increased temperature at a second increase rate to a second increased temperature, and forming an insulating layer after performing the in-situ annealing process at the second increased temperature.

主权项

1. A method of fabricating a semiconductor device, the method comprising:
providing a substrate; forming an insulating base layer on the substrate; disposing a conductive layer on the insulating base layer at an initial temperature; subjecting the conductive layer to an increase in temperature at a first increase rate from the initial temperature to a first increased temperature, wherein the subjecting of the conductive layer to the increase in temperature from the initial temperature to the first increased temperature is performed in a nitrogen environment; performing an in-situ annealing process to the conductive layer at the first increased temperature; subjecting the conductive layer to a second increase in temperature at a second increase rate from the first increased temperature to a second increased temperature, the second increase rate being greater than the first increase rate; forming an insulating layer on the conductive layer after performing an in-situ annealing process at the second increased temperature; disposing a second conductive layer on the insulating layer at the initial temperature; subjecting the second conductive layer to an increase in temperature at the first increase rate from the initial temperature to the first increased temperature, wherein the subjecting of the conductive layer to the increase in temperature from the initial temperature to the first increased temperature is performed in a nitrogen environment: performing an in-situ annealing process to the second conductive layer at the first increased temperature; subjecting the second conductive layer to a second increase in temperature at the second increase rate from the first increased temperature to the second increased temperature; and forming a second insulating layer on the second conductive layer after performing an in-situ annealing process to the second conductive layer at the second increased temperature.