Resin-encapsulated semiconductor device and its manufacturing method

摘要

A resin-encapsulated semiconductor device having a semiconductor chip which is prevented from being damaged. The resin-encapsulated semiconductor device (100) comprises a semiconductor chip (1) including a silicon substrate, a die pad (10) to which the semiconductor chip (1) is secured through a first solder layer (2), a resin-encapsulating layer (30) encapsulating the semiconductor chip (1), and lead terminals (21) electrically connected to the semiconductor chip (1) and including inner lead portion (21b) covered with the resin-encapsulating layer (30). The lead terminals (21) are made of copper or a copper alloy. The die pad (10) is made of 42 alloy or a cover alloy and has a thickness (about 0.125 mm) less than the thickness (about 0.15 mm) of the lead terminals (21).

主权项

1. A resin-sealed semiconductor device comprising:
a semiconductor chip including a silicon substrate; a die pad on which the semiconductor chip is secured; a sealing resin layer sealing the semiconductor chip; and a plurality of lead terminals connected electrically with the semiconductor chip, one end portion of the plurality of lead terminals being covered by the sealing resin layer, wherein a plurality of the lead terminals are arranged along each side of the resin-sealed semiconductor device, wherein any of the lead terminals arranged at an end of one of the sides of the resin-sealed semiconductor device extends from an outer surface of the side of the resin-sealed semiconductor device to a vicinity of a center of the semiconductor chip, wherein the die pad has a curved side surface so as to have a gradually varying thickness, wherein the die pad has a plan area larger than a plan area of the semiconductor chip, wherein, in the die pad, only in a predetermined region other than a region in which the semiconductor chip is arranged, an open part that penetrates from one main surface side to the other main surface side of the die pad is provided, wherein the open part is in a vicinity of the semiconductor chip, and wherein a thermal expansion coefficient of at least one of the semiconductor chip, the die pad, or the lead terminals facilitates removal of moisture near the semiconductor chip and reduces likelihood of moisture reaching the semiconductor chip.