发明名称 |
Techniques for forming angled structures for reduced defects in heteroepitaxy of semiconductor films |
摘要 |
In one embodiment, a method for etching a substrate includes providing a reactive ambient around the substrate when a non-crystalline layer is disposed over a first crystalline material in the substrate; generating a plasma in a plasma chamber; modifying a shape of a plasma sheath boundary of the plasma; extracting ions from the plasma; and directing the ions to the substrate at a non-zero angle of incidence with respect to a perpendicular to a plane of the substrate, wherein the ions and reactive ambient are effective to form an angled cavity through the non-crystalline layer to expose a portion of the first crystalline material at a bottom of the angled cavity, and the angled cavity forms a non-zero angle of inclination with respect to the perpendicular. |
申请公布号 |
US9287123(B2) |
申请公布日期 |
2016.03.15 |
申请号 |
US201414459813 |
申请日期 |
2014.08.14 |
申请人 |
Varian Semiconductor Equipment Associates, Inc. |
发明人 |
Srinivasan Swaminathan;Khaja Fareen Adeni;Ruffell Simon;Hautala John |
分类号 |
H01L21/461;H01L21/02;H01L21/311;H01L29/04;H01L29/06;H01L29/267 |
主分类号 |
H01L21/461 |
代理机构 |
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代理人 |
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主权项 |
1. A method for etching a substrate, comprising:
providing a reactive ambient around the substrate when a non-crystalline layer is disposed over a first crystalline material in the substrate; generating a plasma in a plasma chamber; modifying a shape of a plasma sheath boundary of the plasma; extracting ions from the plasma; directing the ions to the substrate at a non-zero angle of incidence with respect to a perpendicular to a plane of the substrate, wherein the ions and reactive ambient are effective to form an angled trench through the non-crystalline layer to expose a portion of the first crystalline material at a bottom of the angled trench, the angled trench forming a non-zero angle of inclination with respect to the perpendicular; and forming a second crystalline material within the angled trench by epitaxial growth, wherein the first crystalline material and second crystalline material have mismatched lattice dimensions. |
地址 |
Gloucester MA US |