Three terminal fuse with FinFET

摘要

A technique is provided for programming a transistor having a source, a drain, a gate, and a channel region between the source and the drain. The gate is above dielectric above the channel region. A gate voltage is about equal to or greater than a breakdown voltage of the gate dielectric in order to break down the gate dielectric into a breakdown state. Current flows between the source and the drain as a result of breaking down the gate dielectric. In response to the transistor being programmed, the current flowing between the source and the drain is not based on the gate voltage at the gate.

主权项

1. A method for programming a transistor having a source, a drain, a gate, a channel region between the source and the drain, and a gate dielectric above the channel region, the method comprising:
applying a gate voltage about equal to or greater than a breakdown voltage of the gate dielectric in order to break down the gate dielectric into a breakdown state; and causing current to flow between the source and the drain as a result of breaking down the gate dielectric; wherein, in response to the transistor being programmed, the current flowing between the source and the drain is not based on the gate voltage at the gate.