| 发明名称 | Device and method for forming resistive random access memory cell | ||
| 摘要 | A device and method for forming resistive random access memory cell are provided. The method includes: providing a first voltage to a first word line connected to a first RRAM cell to form the first RRAM cell; and providing a negative voltage to a second word line connected to a second RRAM cell that shares a first source line and a first bit line with the first RRAM cell. An exemplary device includes: a first RRAM cell, a second RRAM cell, a first voltage source and a charge pump circuit. The first RRAM cell is connected to a first word line. The second RRAM cell is connected to a second word line. The first voltage source provides a first voltage to the first word line to form the first RRAM cell. The charge pump circuit provides a negative voltage to the second word line. | ||
| 申请公布号 | US9286973(B2) | 申请公布日期 | 2016.03.15 |
| 申请号 | US201314034717 | 申请日期 | 2013.09.24 |
| 申请人 | Taiwan Semiconductor Manufacturing Company Limited | 发明人 | Chang Chih-Yang;Chu Wen-Ting;Ting Yu-Wei;Tsai Chun-Yang;Huang Kuo-Ching |
| 分类号 | G11C11/00;G11C13/00 | 主分类号 | G11C11/00 |
| 代理机构 | Jones Day | 代理人 | Jones Day |
| 主权项 | 1. A method for forming a resistive random access memory (RRAM) cell, comprising: providing a first voltage to a first word line connected to a first RRAM cell to form the first RRAM cell; and providing a negative voltage to a second word line connected to a second RRAM cell that shares a first source line and a first bit line with the first RRAM cell during the formation of the first RRAM cell. | ||
| 地址 | Hsinchu TW | ||