Method for fabricating vertically stacked nanowires for semiconductor applications

摘要

Embodiments of the present disclosure provide methods for forming nanowire structures with desired materials for three dimensional (3D) stacking of fin field effect transistor (FinFET) for semiconductor chips. In one embodiment, a method of forming nanowire structures on a substrate includes forming a multi-material layer on a substrate, wherein the multi-material layer includes repeating pairs of a first layer and a second layer, the substrate further comprising a patterned hardmask layer disposed on the multi-material layer, etching the multi-material layer through openings defined by the patterned hardmask layer to expose sidewalls of the first and the second layer of the multi-material layer, and laterally and selectively etching the second layer from the substrate.

主权项

1. A method of forming nanowire structures on a substrate comprising:
etching a multi-material layer on a substrate, wherein the multi-material layer includes repeating pairs of a first layer and a second layer, the substrate further comprising a patterned hardmask layer disposed on the multi-material layer, wherein etching the multi-material layer exposes sidewalls of the first and the second layer of the multi-material layer through openings defined by the patterned hardmask layer, the multi-material layer having a first end coupled to a first side surface of a source anchor and a second end coupled to a second side surface of a drain anchor, the first and the second side surfaces of the source and the drain anchors longitudinally formed along two sides of the substrate respectively and circumscribing the substrate from the two sides; and laterally and selectively etching the second layer from the substrate.