| 发明名称 | Solid-state imaging device, light detecting device, and electronic apparatus | ||
| 摘要 | A solid-state imaging device includes a Multi-Quantum Wells (MQW) structure which combines and uses a non-Group IV lattice matching-based compound semiconductor with an absolute value of a mismatch ratio of less than 1% on a silicon substrate so as to have sensitivity to at least infrared light. | ||
| 申请公布号 | US9287314(B2) | 申请公布日期 | 2016.03.15 |
| 申请号 | US201414569248 | 申请日期 | 2014.12.12 |
| 申请人 | SONY CORPORATION | 发明人 | Toda Atsushi |
| 分类号 | G01J5/20;H01L27/146;H01L31/0352;H01L31/109 | 主分类号 | G01J5/20 |
| 代理机构 | Sheridan Ross P.C. | 代理人 | Sheridan Ross P.C. |
| 主权项 | 1. A solid-state imaging device, comprising: a Multi-Quantum Wells (MQW) structure which combines and uses a non-Group IV lattice matching-based compound semiconductor with an absolute value of a mismatch ratio of less than 1% on a silicon substrate so as to have sensitivity to at least infrared light, wherein the MQW structure has a photoelectron conversion part, and wherein a surface layer of the photoelectron conversion part is p+. | ||
| 地址 | Tokyo JP | ||