发明名称 |
Memory string and semiconductor device including the same |
摘要 |
A memory string includes a pass transistor, first memory cells connected in series to a drain terminal of the pass transistor, and first to kth memory cell groups connected in parallel to a source terminal of the pass transistor and each including a plurality of second memory cells connected in series. Here, ‘k’ denotes an integer that is equal to or greater than ‘2’. |
申请公布号 |
US9286983(B2) |
申请公布日期 |
2016.03.15 |
申请号 |
US201414220976 |
申请日期 |
2014.03.20 |
申请人 |
SK Hynix Inc. |
发明人 |
Jung Sung Wook;Lee Dong Kee;Yoo Hyun Seung;Park Yu Jin |
分类号 |
G11C16/04;H01L27/115 |
主分类号 |
G11C16/04 |
代理机构 |
IP & T Group LLP |
代理人 |
IP & T Group LLP |
主权项 |
1. A memory string comprising:
a pass transistor; first memory cells connected in series to a drain terminal of the pass ransistor; and first to kth memory cell groups connected in parallel to a source terminal of the pass transistor and each including a plurality of second memory cells connected in series, wherein k denotes an integer that is equal to or greater than ‘2’. |
地址 |
Gyeonggi-do KR |