发明名称 |
ランダム・アクセス電気的プログラム可能なEヒューズROM |
摘要 |
A one-time-programmable-read-only-memory (OTPROM) is implemented in a two-dimensional array of aggressively scaled suicide migratable e-fuses. Word line selection is performed by decoding logic operating at VDD while the bit line drive is switched between VDD and a higher voltage, Vp, for programming. The OTPROM is thus compatible with and can be integrated with other technologies without a cost adder and supports optimization of the high current path for minimal voltage drop during fuse programming. A differential sense amplifier with a programmable reference is used for improved sense margins and can support an entire bit line rather than sense amplifiers being provided for individual fuses. |
申请公布号 |
JP5885315(B2) |
申请公布日期 |
2016.03.15 |
申请号 |
JP20140143116 |
申请日期 |
2014.07.11 |
申请人 |
インターナショナル・ビジネス・マシーンズ・コーポレーションINTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
グレゴリー ジェイ. フレデマン;桐畑 外志昭;アラン ジェイ. レスリー;ジョン エム. サフラン |
分类号 |
H01L21/82;G11C16/04;G11C17/14;H01L21/822;H01L27/04;H01L27/10 |
主分类号 |
H01L21/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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