| 发明名称 | Semiconductor device, method of manufacturing the same and power semiconductor device including the same | ||
| 摘要 | A method of manufacturing a semiconductor device may include: preparing a substrate formed of SiC; depositing crystalline or amorphous silicon (Si) on one surface of the substrate to form a first semiconductor layer; and performing a heat treatment under a nitrogen atmosphere to form a second semiconductor layer formed of SiCN between the substrate and the first semiconductor layer. | ||
| 申请公布号 | US9287363(B2) | 申请公布日期 | 2016.03.15 |
| 申请号 | US201414273269 | 申请日期 | 2014.05.08 |
| 申请人 | SAMSUNG ELECTRO-MECHANICS CO., LTD. | 发明人 | Park Jae Hoon;Song In Hyuk;Jang Chang Su;Um Kee Ju |
| 分类号 | H01L29/16;H01L21/04;H01L29/78;H01L29/51;H01L29/49 | 主分类号 | H01L29/16 |
| 代理机构 | McDermott Will & Emery LLP | 代理人 | McDermott Will & Emery LLP |
| 主权项 | 1. A method of manufacturing a semiconductor device, the method comprising: preparing a substrate formed of SiC; depositing crystalline or amorphous silicon (Si) on one surface of the substrate to form a first semiconductor layer; and performing a heat treatment under a nitrogen atmosphere to form a second semiconductor layer formed of SiCN between the substrate and the first semiconductor layer. | ||
| 地址 | Suwon-Si, Gyeonggi-Do KR | ||