Processing apparatus and method of treating a substrate

摘要

A processing apparatus including a process chamber, a plasma source disposed within the process chamber, wherein the plasma source is movable in a first direction and is configured to emit an ion beam along a second direction that is orthogonal to the first direction. The apparatus may further include a platen disposed within the process chamber for supporting a substrate, and an ion beam current sensor that is disposed adjacent to the platen.

主权项

1. A processing apparatus comprising:
a process chamber; a plasma source disposed within the process chamber and mounted on a vertically movable carriage for moving the plasma source in a first, vertical direction, the movable carriage including a first shaft and a second shaft disposed on opposite sides of the plasma source, the first shaft and the second shaft extending through a first air bearing and a second air bearing, respectively, the plasma source being movable in a first direction and configured to emit an ion beam along a second direction orthogonal to the first direction; a platen disposed within the process chamber for supporting a substrate; and an ion beam current sensor disposed adjacent to the platen.