Flash memory system with EEPROM functionality

摘要

The present invention relates to a flash memory device with EEPROM functionality. The flash memory device is byte-erasable and bit-programmable.

主权项

1. A non-volatile memory device comprising:
an array of memory cells arranged in rows and columns, each row corresponding to a word line and each column corresponding to a bit line, and each memory cell comprising a floating gate, a bit line terminal for connecting to a bit line, a word line terminal for connecting to a word line, and a source line terminal for connecting to a source line; and a word line select line for controlling access by a word line to the byte of memory cells; wherein the device is configured to erase a byte of memory cells without any other memory cells in the array being concurrently erased.