| 摘要 |
The present invention provides a semiconductor memory device with enhanced reliability and a method for operating the same. According to an embodiment of the present invention, the semiconductor memory device includes: a plurality of cell strings including one or more source selection transistor, connected to a common source line, and a plurality of memory cells; one or more source selection lines connected to the source selection transistors; and a peripheral circuit formed to control the cell strings. The peripheral circuit performs a program for the source selection transistors, connected to the selected source selection line, by applying program voltage to one selected from the source selection lines and applying reference voltage to the common source line. |
