发明名称 Tuning the hydrogenation pressure of yttrium for metal hydride based devices.
摘要 The present invention relates to a single element thin-film device, to a method for producing a thin-film device, to a single element for detecting hydrogen absorption, to a hydrogen sensor, to an apparatus for detecting hydrogen, to a tape sensor and to a switching device. A thin-film device comprises a substrate, an active sensing layer whose optical properties change depending on hydrogen content, and a protective layer on the active sensing layer.
申请公布号 NL2012875(B1) 申请公布日期 2016.03.15
申请号 NL20142012875 申请日期 2014.05.23
申请人 TECHNISCHE UNIVERSITEIT DELFT 发明人 PETER NGENE;RUUD JOHANNES WESTERWAAL;BERNARD DAM
分类号 G01N21/77;G01N21/78;G01N33/00;G02F1/15;G02F1/19 主分类号 G01N21/77
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