发明名称 |
Micro device transfer head array |
摘要 |
A micro device transfer head array and method of forming a micro device transfer array from an SOI substrate are described. In an embodiment, the micro device transfer head array includes a base substrate and a patterned silicon layer over the base substrate. The patterned silicon layer may include a silicon interconnect and an array of silicon electrodes electrically connected with the silicon interconnect. Each silicon electrode includes a mesa structure protruding above the silicon interconnect. A dielectric layer covers a top surface of each mesa structure. |
申请公布号 |
US9288899(B2) |
申请公布日期 |
2016.03.15 |
申请号 |
US201514681707 |
申请日期 |
2015.04.08 |
申请人 |
LuxVue Technology Corporation |
发明人 |
Golda Dariusz;Bibl Andreas |
分类号 |
H01L21/266;H05K1/02;H01L21/768;H01L23/48;H01L21/683;H05K1/03;H05K1/09;H05K1/11 |
主分类号 |
H01L21/266 |
代理机构 |
Blakely, Sokoloff, Taylor & Zafman LLP |
代理人 |
Blakely, Sokoloff, Taylor & Zafman LLP |
主权项 |
1. A transfer head array comprising:
a base substrate; an insulating layer on the base substrate; a patterned device layer on the insulting layer, the patterned device layer comprising a trace interconnect integrally formed with an array of electrodes, wherein each electrode includes a mesa structure protruding above the trace interconnect; and a dielectric layer covering a top surface of each mesa structure. |
地址 |
Santa Clara CA US |