发明名称 Micro device transfer head array
摘要 A micro device transfer head array and method of forming a micro device transfer array from an SOI substrate are described. In an embodiment, the micro device transfer head array includes a base substrate and a patterned silicon layer over the base substrate. The patterned silicon layer may include a silicon interconnect and an array of silicon electrodes electrically connected with the silicon interconnect. Each silicon electrode includes a mesa structure protruding above the silicon interconnect. A dielectric layer covers a top surface of each mesa structure.
申请公布号 US9288899(B2) 申请公布日期 2016.03.15
申请号 US201514681707 申请日期 2015.04.08
申请人 LuxVue Technology Corporation 发明人 Golda Dariusz;Bibl Andreas
分类号 H01L21/266;H05K1/02;H01L21/768;H01L23/48;H01L21/683;H05K1/03;H05K1/09;H05K1/11 主分类号 H01L21/266
代理机构 Blakely, Sokoloff, Taylor & Zafman LLP 代理人 Blakely, Sokoloff, Taylor & Zafman LLP
主权项 1. A transfer head array comprising: a base substrate; an insulating layer on the base substrate; a patterned device layer on the insulting layer, the patterned device layer comprising a trace interconnect integrally formed with an array of electrodes, wherein each electrode includes a mesa structure protruding above the trace interconnect; and a dielectric layer covering a top surface of each mesa structure.
地址 Santa Clara CA US