Semiconductor device and manufacturing method thereof

摘要

A method of manufacturing a semiconductor device includes forming an opening in a first substrate and filling the opening with a metal to form a first connection electrode. The first substrate is then polished by chemical mechanical polishing under conditions such that a polishing rate of the metal is less that of the region surrounding the metal. The chemical mechanical polishing thereby causes the first connection electrode to protrude from the surface of the first substrate. The first substrate is stacked with a second substrate having a second connection electrode. The first and second connection electrodes are bonded by applying pressure and heating to a temperature that is below the melting point of the metal of the first connection electrode.

主权项

1. A method of manufacturing a semiconductor device, comprising:
forming an opening in a first substrate; forming a stopper layer on a surface of the first substrate in a region surrounding the opening; forming a first metal in the opening and on the stopper layer; polishing the first metal with a first chemical mechanical polishing and stopping on the stopping layer to form a first connection electrode in the first substrate; polishing the first substrate using a second chemical mechanical polishing in which a polishing rate of the first metal is less than that of a region surrounding the first connection electrode thereby causing the first connection electrode to protrude from the first substrate; stacking the first substrate and a second substrate that includes a second connection electrode such that the first and second connection electrodes face each other; and diffusion-bonding the first and second connection electrodes to each other by pressing and heating the first and second substrates to a temperature at or below the melting point of the first metal.