Method of fabricating FinFETs

摘要

The disclosure relates to a method of fabricating a semiconductor device including forming a patterned hardmask layer over a substrate comprising a major surface. The method further includes forming a plurality of first trenches and a plurality of second trenches performed at an electrostatic chuck (ESC) temperature between about 90° C. to 120° C. in the substrate. The plurality of first trenches have a first width and extend downward from the substrate major surface to a first height, and the plurality of second trenches have a second width less than first width and extend downward from the substrate major surface to a second height greater than the first height.

主权项

1. A method of making a fin field effect transistor (FinFET) comprising:
forming a plurality of first trenches having a first width and a first depth in a substrate, each first trench of the plurality of first trenches extending downward from a surface of the substrate to a first height, wherein a first space between adjacent first trenches defines a first fin; forming a plurality of second trenches having a second width and a second depth in the substrate, the second width less than the first width, each second trench of the plurality of second trenches extending downward from the surface of the substrate to a second height greater than the first height, wherein a second space between adjacent second trenches defines a second fin; forming a first isolation structure partially filling each first trench of the plurality of first trenches; and forming a second isolation structure partially filling each second trench of the plurality of second trenches, wherein a difference between a height of the first isolation structure and the first depth is substantially equal to a difference between a height of the second isolation structure and the second depth.