发明名称 |
Antifuse of semiconductor device and method of fabricating the same |
摘要 |
An antifuse of a semiconductor device and a method of fabricating the same capable of causing an antifuse to stably operate by rupturing the antifuse at a specific point and stabilizing a current level when rupturing the antifuse are provided. The antifuse may include: a device isolation layer defining a first active region in a semiconductor substrate; a first and second junction regions provided in the first active region; a second active region formed over the first junction region; a gate insulating layer formed over the first active region and the second active region; and a gate electrode formed over the gate insulating layer. |
申请公布号 |
US9287274(B2) |
申请公布日期 |
2016.03.15 |
申请号 |
US201514608141 |
申请日期 |
2015.01.28 |
申请人 |
SK HYNIX INC. |
发明人 |
Hong Yeong Eui |
分类号 |
H01L27/112;H01L21/266;H01L21/02;H01L21/28;H01L21/311;H01L23/525;H01L29/66;H01L29/78 |
主分类号 |
H01L27/112 |
代理机构 |
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代理人 |
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主权项 |
1. A method of fabricating an antifuse of a semiconductor memory device, the method comprising:
forming a second active region over a first active region in a semiconductor substrate; forming a gate insulating layer over the second active region and the first active region, the gate insulating layer having a stepped portion proximate a sidewall of the second active region; forming a gate electrode over the gate insulating layer and the first active region; etching the gate insulating layer and the gate electrode to form a gate pattern; and forming a first junction region in the first active region to overlap the second active region. |
地址 |
Icheon KR |